Enhanced thermoelectric performance via quantum confinement in a metal oxide semiconductor field effect transistor for thermal management

Enhanced thermoelectric performance via quantum confinement in a metal oxide semiconductor field effect transistor for thermal management

Blog Article

Abstract The performance of thermoelectric devices is gauged by the dimensionless figure of merit $${{{{{oldsymbol{ZT}}}}}}$$ ZT.Improving $${{{{{oldsymbol{ZT}}}}}}$$ ZT has proven to be a formidable challenge given the interdependence of its constitutive quantities, namely Seebeck coefficient, electrical conductivity, thermal conductivity, and temperature.Here, we use quantum L-Glutamine confinement to decouple Seebeck coefficient and electrical conductivity to demonstrate an order of magnitude quantum-based enhancement to the thermoelectric figure of merit $${{{{{oldsymbol{ZT}}}}}}$$ ZT in complimentary metal-oxide-semiconductor field-effect transistors.While most quantum-based enhancement is done through physical confinement using two-dimensional materials, our approach uses electrical confinement.Because of this, our device is more robust than the two-dimensional materials currently used.

We further articulate that improvement by as much as a Xpel Diuretic factor of 50 could be achieved in a practical setting.Our approach further provides a path for monolithic integration of on-chip coolers and energy scavengers with virtually no deviation from the fabrication flow of standard electronics.